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This model captures the dynamic resistive switching behavior of an oxide-based memristor. The device features a thin metal oxide layer sandwiched between two metal electrodes. When a voltage is applied, oxygen vacancies within the oxide layer migrate, acting as charge carriers and enabling resistive switching.

The model incorporates key physical phenomena, including oxygen vacancy drift–diffusion, current continuity, and heat transfer, all fully coupled through a multiphysics framework. These interactions are essential to accurately reproduce the device's behavior. Simulation results reveal the characteristic pinched hysteresis curve of memristors, closely aligning with experimental data reported in the literature.

Ref: Kim, Sungho, ShinHyun Choi, and Wei Lu. "Comprehensive physical model of dynamic resistive switching in an oxide memristor." ACS nano 8, no. 3 (2014): 2369-2376.