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In this model, we show how to model Seebeck effect which works as a thermoelectric generator. Seebeck effect is a phenomena where the difference in temperature of a material leads to a potential difference. The potential drawn in this model was compared with the paper by Jaegle (Example ... 詳細を見る
It is more difficult to generate laser emissions in the short-wavelength part of the visible and near visible part of the electromagnetic spectrum than in the long-wavelength part. Nonlinear frequency mixing makes it easier to generate new short wavelengths from existing laser ... 詳細を見る
Microstrip filters can be fabricated directly on a printed circuit board (PCB) with a microstrip line going from the input to the output. Along the microstrip line there are a number of stubs of certain lengths and widths. The design of the filter involves choosing the impedance of the ... 詳細を見る
RFIDs are used in a multitude of applications such as tracking or identifying consumer products and their packaging. An RFID system consists of two main parts: A tag or transponder with a printed circuit-board (PCB) antenna A reader unit with a larger RF antennaThe reader antenna ... 詳細を見る
This model of a circular waveguide demonstrates how to use ports with numerical solution of the port modes. It illustrates how to align the polarization of degenerate port modes and in particular how to model and excite the TE11 mode of circular waveguides in 3D. 詳細を見る
Passive devices can be designed using lumped element features if both the operating frequency of the device and the insertion loss of lumped elements are low. This example simulates two types of lumped element filters that are similar to lumped ports, except that they are strictly ... 詳細を見る
In this tutorial, an uncertainty quantification analysis is performed on the Microstrip Patch Antenna model from the RF Module Application Library to explore how variations in input parameters, such as material properties or geometric variations, impact the antenna’s performance in terms ... 詳細を見る
This tutorial studies the etching of silicon using an inductively coupled plasma reactor with an RF bias in a mixture of CF4/O2. The etching rate is computed along the wafer as a function of the RF bias voltage. 詳細を見る
In this example, an SF6/argon plasma reactor at moderate pressure is studied using a global model. The heavy species heat equation is included. Parametric sweeps for input power and argon mole fraction are computed. 詳細を見る
In this example, a hydrogen plasma reactor at moderate pressure is studied using a global model. The heavy species heat equation is included. In the first part of the study, a Maxwellian electron energy distribution function is used. In the second part, the global model is solved self ... 詳細を見る
