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In signal integrity (SI) applications, time-domain reflectometry (TDR) is a useful technique for analyzing the discontinuity in a signal path by observing the reflected signal strength. The reflected signal distorts the input pulse mainly by impedance mismatch if there is no external ... 詳細を見る
In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... 詳細を見る
This model simulates the coupling of free-space laser radiation into waveguide modes using an optical grating coupler. The coupling efficiency and the radiation loss are calculated for different angles of incidence of the laser beam. 詳細を見る
One method of creating spring-like structures or inducing curvature in thin structures is to plate them to substrates that are under the influence of residual stresses. The plating process can control this stress even for similar materials. One such device is the electrostatically ... 詳細を見る
The thin low permittivity gap boundary condition is meant to approximate a thin layer of material with low relative permittivity compared to its surroundings. This boundary condition is available for electrostatic field modeling. This example compares the thin low permittivity gap ... 詳細を見る
UHF RFID tags are widely used for identifying and tracking animals. This model simulates a passive radio-frequency identification (RFID) tag for the UHF frequency range. With respect to the chip transponder’s complex impedance, a reflection coefficient is computed. This is done using an ... 詳細を見る
FEM simulation can be used to obtain a SAW velocity and some related parameters (squared electromechanical coupling coefficient, reflectivity, etc.) for different typical configurations. Such parameters are input data for various analytical and semi-analytical methods of SAW device ... 詳細を見る
A Touchstone file describes the frequency responses of an n-port network circuit in terms of S-parameters. This can be used to simplify arbitrarily complex circuits. The Touchstone file can be obtained from numerical simulations or network analyzer measurements. The obtained file for a ... 詳細を見る
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of ... 詳細を見る
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... 詳細を見る
