アプリケーションギャラリには電気, 構造, 音響, 流体, 熱および化学分野に関連する COMSOL Multiphysics® チュートリアルおよびデモアプリファイルが用意されています. これらの例はチュートリアルモデルまたはデモアプリファイルとそれに付随する手順をダウンロードすることにより独自のシミュレーション作業の開始点として使用できます.
クイック検索機能を使用して専門分野に関連するチュートリアルやアプリを検索します. MPHファイルをダウンロードするには, ログインするか, 有効な COMSOL ライセンスに関連付けられている COMSOL Access アカウントを作成します. ここで取り上げた例の多くは COMSOL Multiphysics® ソフトウェアに組み込まれ ファイルメニューから利用できるアプリケーションライブラリからもアクセスできることに注意してください.
This example demonstrates how to compute transmission line parameters such as series resistance, series inductance, shunt conductance, and shunt capacitance per unit length using the predefined Transmission Line RLGC Parameters multiphysics interface. The demonstration also includes the ... 詳細を見る
This example shows how to model a FinFET in 3D. The I-V characteristics of the device are simulated. First, the gate voltage is swept to obtain the drain current versus gate voltage plot. Then, the drain current versus drain voltage characteristics are computed for fixed gate voltages. 詳細を見る
A demo model of a 50 Hz AC coil wound around a ferromagnetic (linear) core. The model is intended as a tutorial to show how to create a relatively complex geometry and set up the new Multi-Turn Coil features for the simulation. The model requires the Design module to fillet the edges of ... 詳細を見る
A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of ... 詳細を見る
This model demonstrates the simulation of surface dielectric barrier discharges (DBDs) using the Electric Discharge interface. The formulation incorporates a comprehensive set of physical processes, including charge transport, impact ionization, electron attachment, recombination, and ... 詳細を見る
This tutorial studies the deposition of amorphous silicon using an inductively coupled plasma reactor with a silane/argon gas mixture. It examines how the deposition rate varies across the wafer as a function of silane mole fraction and input power. 詳細を見る
This tutorial simulates the turn-on transient (forward recovery) of a simple PIN diode, based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 242, 2008 edition). The diode is current driven with a constant ramp rate of 1e9, 2e9 and 1e10 A/cm^2/sec and a ... 詳細を見る
The model compare the electromagnetic force calculated by virtual work and maxwell stress tensor methods on the axial magnetic bearing. The forces is evaluated by studying the effect of a small displacement on the electromagnetic energy of the system. This is done by using the Magnetic ... 詳細を見る
A homopolar generator is composed of an electrically conductive rotating disc placed in a uniform magnetic field that is perpendicular to the plane of rotation. The motion of the conductor through the static magnetic field induces Lorentz currents in the disc. By connecting the outside ... 詳細を見る
An automotive midwoofer is modeled using the lumped parameter approach. The electrical and mechanical components are modeled using a lumped electric circuit, which is coupled to a finite element model for the acoustics using the Lumped Speaker Boundary feature. The large signal ... 詳細を見る
