アプリケーションギャラリ

このチュートリアルでは, パラメーター推定機能を用いて MEMS 共振器の電気回路モデルを導出する方法を説明します. このモデルは, 電気回路インターフェースを用いて作成された修正 Butterworth-Van Dyke 回路であり, 薄膜バルク音響共振器 (FBAR) を表しています. パラメーター推定スタディを用いて, モデル内の集中定数素子のパラメーターを解析しました. 詳細を見る

In this tutorial, the eigenmodes and eigenfrequencies of an air bubble in water is modeled and compared with analytical solutions. The effects of surface tension is included and allows to model both the pulsating mode and the surface modes of the bubble. Lastly, the effect of the ... 詳細を見る

Frequency selective surfaces (FSS) are periodic structures with a bandpass or a bandstop frequency response. This model shows that only signals around the center frequency can pass through the periodic complementary split ring resonator layer. 詳細を見る

This model studies free and forced vibrations of a deep beam. The solution for eigenfrequency, frequency response and transient analysis are computed using a Timoshenko beam and compared with analytical results. 詳細を見る

Including circumferential displacements in a 2D axisymmetric Solid Mechanics interface allows to compute twist and bending deformations. This model determines stress concentration factors for a hollow shaft for load cases of axial extension, torsion, as well as bending, using a ... 詳細を見る

In this example, it is demonstrated how to extend the built-in linear elastic material model to a Cosserat material through the addition of microrotation degrees of freedom. A cylindrical bar under pure torsion is analyzed and the effect of the Cosserat length scale parameter on the ... 詳細を見る

This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer. This kind of device geometry is simple and cheap to ... 詳細を見る

This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding absorption of the light and the associated change in ... 詳細を見る

This example shows an approximate approach to model a dot-in-well solar cell as described by Asahi et al. in the reference paper. The quantum wells and the layers of quantum dots are each treated as lumped energy levels in the band gap. The authors specify transitions between the dot ... 詳細を見る

In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey&ndash ... 詳細を見る