アプリケーションギャラリ

This example shows how to model a FinFET in 3D. The I-V characteristics of the device are simulated. First, the gate voltage is swept to obtain the drain current versus gate voltage plot. Then, the drain current versus drain voltage characteristics are computed for fixed gate voltages. 詳細を見る

In nuclear fusion reactors, the conducting fluid, such as the fusion plasma and the liquid metal in the reactor blanket, will interact with the background magnetic field. This phenomenon is referred to as magnetohydrodynamics (MHD). The electromagnetic field and fluid flow are fully ... 詳細を見る

This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift-diffusion model. The model uses the Stabilized Convection-Diffusion Equation interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of ... 詳細を見る

This example exemplifies how to model applications using the Events Interface where a thermostat is simulated. A more detailed description of the phenomenon and the modeling process can be seen in the blog post "Implementing a Thermostat with the Events Interface". 詳細を見る

This model computes the fundamental eigenfrequency and eigenmode for a tuning fork that is synchronized from Inventor® via the LiveLink™ interface. The length of the fork is then optimized so that the tuning fork sounds the note A, 440 Hz. 詳細を見る

This model presents a method to analyze acoustic damping pads. These pads use a constrained layer of viscoelastic material to dissipate energy and thus reduce the energy radiated as noise. Damping pads are used in many different industries to reduce the noise generated by vibrating ... 詳細を見る

This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... 詳細を見る

This example shows how to model secondary current distribution and electrode growth with a moving geometry. To avoid numerical instabilities, a seed layer is introduced in the initial geometry to obtain a right angle at the edge between the growing electrode and the insulator. 詳細を見る

KOH(aq), an alkali metal hydroxide solution, is widely used in anisotropic wet etching technology and is one of the most commonly utilized solutions for micromachining silicon wafers. Anisotropic etching refers to a process where the etching rate varies in different directions, primarily ... 詳細を見る

This model utilizes the thermoviscous acoustic interface in a sub-model to obtain detailed results for the transfer impedance of a perforated plate (including the thermal and viscous losses). The impedance is in turn used as an internal impedance in a pressure acoustic model of a ... 詳細を見る