アプリケーションギャラリ

Silicon micromechanical resonators have long been used for designing sensors and are now becoming increasingly important as oscillators in the consumer electronics market. In this series of models, a surface micromachined MEMS resonator, designed as part of a micromechanical filter, is ... 詳細を見る

This model describes the evaporation of a droplet that consists of concentrated solution of acetone and water. It accounts for the coupled phenomena of chemical species transport and heat transfer over phase boundaries (liquid-gas boundary) as well as for multiphase flow. The droplet ... 詳細を見る

This tutorial simulates a standard test and benchmark model for nonreflecting conditions and sponge layers for linearized Euler-like systems. It involves the propagation of a transient Gaussian pulse in a 2D uniform flow. The Convected Wave Equation, Time Explicit interface solves the ... 詳細を見る

This example illustrates how to combine different Creep material models. Here a Norton–Bailey model (primary creep) is combined with a Norton model (secondary creep). This example is a continuation of the model thermally induced creep. 詳細を見る

This model illustrates how to implement a multiphysics contact. It models the thermal and electrical behavior of two contacting parts of a switch. The electrical current and the heat flow from one part to the other only through the contact surface. The contact switch device has a ... 詳細を見る

In this example, the eigenmodes of a structural damper are computed. In the damper, most of the deformation is controlled by the viscoelastic domains, which have strongly frequency-dependent stiffness and damping properties. This leads to a nonlinear eigenfrequency problem, which can be ... 詳細を見る

This tutorial uses the submodeling technique to accurately resolve the stress concentrations in a wheel rim. First a global model is solved to obtain the displacements, which are then used as boundary conditions in a local model of the region where the stress concentrations occur. 詳細を見る

This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by ... 詳細を見る

This model shows how to model a simple Shockley diode— a four-layer PNPN semiconductor device. The Shockley diode is also named as thyristor. In this model, the Analytic Doping Model node is utilized to define the doping profiles for each domain. A time-dependent study is employed to ... 詳細を見る

Example of a moving-coil loudspeaker where lumped parameters represent the behavior of the electrical and mechanical components. The Thiele-Small parameters (small-signal parameters) serve as input to the lumped model, which is represented using the Electric Circuit interface. The ... 詳細を見る