アプリケーションギャラリ

This example studies viscoplastic creep in solder joints under thermal loading using the Anand viscoplasticity model, which is suitable for large, isotropic, viscoplastic deformations in combination with small elastic deformations. The geometry includes two electronic components (chips) ... 詳細を見る

This model shows how to simulate the complex discharge physics behind the well-known electrostatic discharge (ESD). The model connects the Electrical Discharge interface with the Circuit interface to simulate how ESD current is generated when a human hand touches metal. 詳細を見る

This example shows how to perform a fatigue analysis of a structure subjected to random vibrations. Times to failure using the cycle counting models according to Bendat and Dirlik are compared. 詳細を見る

This model demonstrates the use of moving meshes in the application of copper electrodeposition on circuit boards. In these environments, the presence of cavities or 'trenches' are apparent. The model makes use of the Tertiary, Nernst-Planck interface for electrodeposition to keep track ... 詳細を見る

The mutual inductance and induced currents between a single turn primary and twenty turn secondary coil in a concentric coplanar arrangement is computed using a frequency domain model. The secondary coil is modeled using a homogenized approach which does not explicitly consider each turn ... 詳細を見る

This example illustrates the principle of wet chemical etching for 2D geometry under laminar flow. The purpose of this tutorial is to examine how the copper substrate material is depleted and how the cavity shape evolves during the wet etching process. Wet chemical etching is ... 詳細を見る

Unwanted electrical arcing poses significant risks to the reliability and safety of electrical and electronic systems. To enhance predictive capabilities and deepen understanding of arc behavior, we present a comprehensive numerical model for simulating transient arc discharge phenomena ... 詳細を見る

An ion-sensitive field-effect transistor (ISFET) is constructed by replacing the gate contact of a MOSFET with an electrolyte of interest. The concentration of a specific ionic species in the electrolyte can be determined by measuring the change in the gate voltage due to the interaction ... 詳細を見る

This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate ... 詳細を見る

This example demonstrates a benchmark test showing that Electric Currents in Layered Shells physics interface can be used to obtain the same results as when the model is solved with the Electric Currents interface based on a solid 3D structure. 詳細を見る