アプリケーションギャラリ

This model shows how to model the avalanche breakdown due to the impact ionization in a Silicon Carbide diode. The current-voltage (I-V) characteristics of the device are presented as well as the electric field distribution plot. Furthermore, the carrier generation term has been computed ... 詳細を見る

Drop tests are used to evaluate how consumer products respond to impacts and high accelerations. In this example, the Solid Mechanics, Explicit Dynamics interface is used to numerically simulate a drop test of a mobile phone, highlighting the permanent deformation of the aluminum case ... 詳細を見る

This model computes the input impedance/admittance to an acoustic system in the frequency domain. The system here represents a typical measurement setup used for testing hearing aids and includes domains with thermoviscous boundary layer losses. The input admittance, computed in the ... 詳細を見る

This model shows how to model a simple Shockley diode— a four-layer PNPN semiconductor device. The Shockley diode is also named as thyristor. In this model, the Analytic Doping Model node is utilized to define the doping profiles for each domain. A time-dependent study is employed to ... 詳細を見る

When a droplet is placed on a substrate on which surface acoustic waves (SAWs) are traveling, the energy of the SAWs is transferred into the droplet to form an acoustic field. The transferred energy is attenuated and generates a streaming flow. This type of streaming enables contactless ... 詳細を見る

This example shows how to model a FinFET in 3D. The I-V characteristics of the device are simulated. First, the gate voltage is swept to obtain the drain current versus gate voltage plot. Then, the drain current versus drain voltage characteristics are computed for fixed gate voltages. 詳細を見る

In this example, the dynamics of a hopping hoop is simulated. A rigid rolling ring with a point mass on the perimeter can, under certain conditions, jump up from the surface on which it is rolling. The effects of different parameters like initial velocity and friction are explored. You ... 詳細を見る

In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... 詳細を見る

A tube connection consisting of a flange with eight prestressed bolts is subjected to a set of loads: an internal pressure, an axial force, and an external bending moment. Due to two symmetry planes, it is sufficient to only consider one quarter of the full geometry. The study ... 詳細を見る

This example is an adaptation of our DC Characteristics of a MOS Transistor (MOSFET) model where the metal and dielectric domains are modeled explicitly and not via a boundary condition. Therefore, the potential profile inside the metal and the insulator can be observed. 詳細を見る