アプリケーションギャラリには電気, 構造, 音響, 流体, 熱および化学分野に関連する COMSOL Multiphysics® チュートリアルおよびデモアプリファイルが用意されています. これらの例はチュートリアルモデルまたはデモアプリファイルとそれに付随する手順をダウンロードすることにより独自のシミュレーション作業の開始点として使用できます.
クイック検索機能を使用して専門分野に関連するチュートリアルやアプリを検索します. MPHファイルをダウンロードするには, ログインするか, 有効な COMSOL ライセンスに関連付けられている COMSOL アクセスアカウントを作成します. ここで取り上げた例の多くは COMSOL Multiphysics® ソフトウェアに組み込まれ ファイルメニューから利用できるアプリケーションライブラリからもアクセスできることに注意してください.
This document explains how to install and run COMSOL Multiphysics® and COMSOL Server™ with Microsoft® Azure. This requires that you have first acquired a Floating Network License (FNL) or COMSOL Server License (CSL) from COMSOL. The license manager software can run ... 詳細を見る
In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron ... 詳細を見る
This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding absorption of the light and the associated change in ... 詳細を見る
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation ... 詳細を見る
When radiation occurs across a very narrow gap this is often well-approximated as radiation between infinite parallel plates. This model considers three aluminum plates separated by narrow air gaps. The model compares the classical approach, based on the Surface-to-Surface Radiation ... 詳細を見る
In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more ... 詳細を見る
This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate ... 詳細を見る
This model shows how to set up a 3D simulation of a n-p-n bipolar transistor. It is a 3D version of the device shown in the Bipolar Transistor model, and demonstrates how to extend semiconductor modeling into 3D using COMSOL Multiphysics. As in the 2D version of this model, the device ... 詳細を見る
Interfacial failure by delamination or debonding can be simulated with a Cohesive Zone Model (CZM). This example shows the implementation of a CZM with a bilinear traction-separation law. It is used to predict the mixed-mode softening onset and delamination propagation in a composite ... 詳細を見る
Diaphragm accumulators are essential components that store energy and regulate hydraulic systems. A flexible rubber diaphragm divides the hydraulic fluid from a compressible inert gas, typically nitrogen. These accumulators perform multiple tasks, such as temporarily storing hydraulic ... 詳細を見る