アプリケーションギャラリ

This example is an adaptation of our DC Characteristics of a MOS Transistor (MOSFET) model where the metal and dielectric domains are modeled explicitly and not via a boundary condition. Therefore, the potential profile inside the metal and the insulator can be observed. 詳細を見る

This tutorial example is kindly provided by Dr. James Ransley at Veryst Engineering, LLC. This model continues from the base model “A Micromachined Comb-Drive Tuning Fork Rate Gyroscope”, which is also provided by Dr. Ransley. The model demonstrates how to accurately compute the effects ... 詳細を見る

This example illustrates the principle of wet chemical etching for 2D geometry under laminar flow. The purpose of this tutorial is to examine how the copper substrate material is depleted and how the cavity shape evolves during the wet etching process. Wet chemical etching is ... 詳細を見る

This model demonstrates how to simulate a metasurface beam deflector that uses anomalous refraction. The structure itself is a repeated array of six posts (so-called meta elements). The periodicity of the individual posts is 500 nm, so the full structure of six posts is 3 um wide. The ... 詳細を見る

This example models galvanic corrosion between two different phases in a magnesium alloy for a representative cross-sectional microstructure configuration. The Level Set interface is used here to model dissolution of a constituent phase leading to topological changes. The electrode ... 詳細を見る

This tutorial models the acoustic behavior of a loudspeaker driver mounted in a bass reflex enclosure. The enclosure, sometimes called the cabinet, alters substantially the sensitivity and radiation characteristics of the loudspeaker and it is why it is usually considered part of the ... 詳細を見る

This non-conventional model of porous media flow utilizes creeping (Stokes) flow in the interstices of a porous media. The model comes from the pore-scale flow experiments conducted by Arturo Keller, Maria Auset, and Sanya Sirivithayapakorn of the University of California, Santa Barbara. ... 詳細を見る

Fatigue testing of nonlinear materials with creep mechanism is a time-consuming process. In accelerated life testing the experiment time is greatly reduced by subjecting the material to testing conditions in excess of the operating one. In the model an aggressive thermal load cycle is ... 詳細を見る

In the semiconductor industry, rapid thermal annealing (RTA) is a semiconductor process step used for the activation of dopants and the interfacial reaction of metal contacts. In principle, the operation involves rapid heating of a wafer from ambient to approximately 1000–1500 K. As soon ... 詳細を見る

This model shows how to model the avalanche breakdown due to the impact ionization in a Silicon Carbide diode. The current-voltage (I-V) characteristics of the device are presented as well as the electric field distribution plot. Furthermore, the carrier generation term has been computed ... 詳細を見る