アプリケーションギャラリ

This tutorial model explores the behavior of a microwave plasma torch. The plasma is generated within a dielectric tube inserted in a rectangular waveguide. The simulation solves the coupled equations for plasma transport and heating, microwave electromagnetic fields, fluid flow, and ... 詳細を見る

This tutorial studies the deposition of amorphous silicon using an inductively coupled plasma reactor with a silane/argon gas mixture. It examines how the deposition rate varies across the wafer as a function of silane mole fraction and input power. 詳細を見る

This model demonstrates how a nonlinear equation system can be setup to solve for the eigenfrequencies of a symmetric laser cavity. The model uses the bidirectional formulation of the Electromagnetic Waves, Beam Envelopes physics interface. The computed eigenfrequencies are verified with ... 詳細を見る

Optical computing has been a promising paradigm alternative to the current electronic computers. This model simulates an optical 4-by-4 unitary matrix multiplication device based on a network of six Mach–Zehnder interferometers (MZIs). A more detailed description of this model can be ... 詳細を見る

This is a primer model of a permanent magnet machine. It is a generic model that can be modified to simulate a motor or generator. It demonstrates different capabilities of COMSOL Multiphysics® to examine aspects of machine design, such as air gap magnetomotive force (MMF), ... 詳細を見る

This model uses the Semiconductor and RF modules to describe a photoconductive antenna (PCA). A laser pulse is applied on the surface of undoped LT-GaAs to generate electron-hole-pairs, which move under the influence of an external E-field creating a transient electric current pulse. ... 詳細を見る

One way to design a filter is to use the element values of well-known filter prototypes, such as maximally flat or equal-ripple low-pass filters. It is easier to fabricate a distributed element filter on a microwave substrate than a lumped element filter, since it is cumbersome to find ... 詳細を見る

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron ... 詳細を見る

This example is an adaptation of our DC Characteristics of a MOS Transistor (MOSFET) model where the metal and dielectric domains are modeled explicitly and not via a boundary condition. Therefore, the potential profile inside the metal and the insulator can be observed. 詳細を見る

Some conventional three-port power dividers are resistive power dividers and T-junction power dividers. Such dividers are either lossy or not matched to the system reference impedance at all ports. In addition, isolation between two coupled ports is not guaranteed. The Wilkinson power ... 詳細を見る