アプリケーションギャラリ

This model shows how to add several linked mobility models to the simple MOSFET example. 詳細を見る

This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative recombination across the band gap is modeled, as well as non-radiative Auger and trap-assisted ... 詳細を見る

With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The ... 詳細を見る

This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D ... 詳細を見る

This app demonstrates the following: Multiple components (1D and 3D) in a single app Using the same choice list in the app as in the model using Data Access functionality Output numerical results for a specific time step using a combo box The app combines the Ray Optics Module and ... 詳細を見る

This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The ... 詳細を見る

This model captures the dynamic resistive switching behavior of an oxide-based memristor. The device features a thin metal oxide layer sandwiched between two metal electrodes. When a voltage is applied, oxygen vacancies within the oxide layer migrate, acting as charge carriers and ... 詳細を見る

This tutorial model solves a two-component Schrödinger equation for the eigenstates of a simple silicon quantum dot in a uniform magnetic field, based on the paper by Jock et al. on the topic of spin-orbit qubits. The built-in domain condition Lorentz Force for the Schrödinger Equation ... 詳細を見る

An ion-sensitive field-effect transistor (ISFET) is constructed by replacing the gate contact of a MOSFET with an electrolyte of interest. The concentration of a specific ionic species in the electrolyte can be determined by measuring the change in the gate voltage due to the interaction ... 詳細を見る

Schottky Contact This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental ... 詳細を見る