Schottky Contact

Application ID: 16367


Schottky Contact

This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental measurements found in the literature

This model example illustrates applications of this type that would nominally be built using the following products:

半導体モジュール