アプリケーションギャラリには電気, 構造, 音響, 流体, 熱および化学分野に関連する COMSOL Multiphysics® チュートリアルおよびデモアプリファイルが用意されています. これらの例はチュートリアルモデルまたはデモアプリファイルとそれに付随する手順をダウンロードすることにより独自のシミュレーション作業の開始点として使用できます.
クイック検索機能を使用して専門分野に関連するチュートリアルやアプリを検索します. MPHファイルをダウンロードするには, ログインするか, 有効な COMSOL ライセンスに関連付けられている COMSOL Access アカウントを作成します. ここで取り上げた例の多くは COMSOL Multiphysics® ソフトウェアに組み込まれ ファイルメニューから利用できるアプリケーションライブラリからもアクセスできることに注意してください.
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... 詳細を見る
This app demonstrates the following: Multiple components (1D and 3D) in a single app Using the same choice list in the app as in the model using Data Access functionality Output numerical results for a specific time step using a combo box The app combines the Ray Optics Module and ... 詳細を見る
The Superlattice Band Gap Tool model helps the design of periodic structures made of two alternating semiconductor materials (superlattices). The model uses the effective mass Schrödinger equation to estimate the electron and hole ground state energy levels in a given superlattice ... 詳細を見る
This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The ... 詳細を見る
This model shows how to add several linked mobility models to the simple MOSFET example. 詳細を見る
MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation ... 詳細を見る
This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative recombination across the band gap is modeled, as well as non-radiative Auger and trap-assisted ... 詳細を見る
In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey&ndash ... 詳細を見る
In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... 詳細を見る
This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a ... 詳細を見る
