アプリケーションギャラリには電気, 構造, 音響, 流体, 熱および化学分野に関連する COMSOL Multiphysics® チュートリアルおよびデモアプリファイルが用意されています. これらの例はチュートリアルモデルまたはデモアプリファイルとそれに付随する手順をダウンロードすることにより独自のシミュレーション作業の開始点として使用できます.
クイック検索機能を使用して専門分野に関連するチュートリアルやアプリを検索します. MPHファイルをダウンロードするには, ログインするか, 有効な COMSOL ライセンスに関連付けられている COMSOL Access アカウントを作成します. ここで取り上げた例の多くは COMSOL Multiphysics® ソフトウェアに組み込まれ ファイルメニューから利用できるアプリケーションライブラリからもアクセスできることに注意してください.
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... 詳細を見る
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... 詳細を見る
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... 詳細を見る
This tutorial model solves a two-component Schrödinger equation for the eigenstates of a simple silicon quantum dot in a uniform magnetic field, based on the paper by Jock et al. on the topic of spin-orbit qubits. The built-in domain condition Lorentz Force for the Schrödinger Equation ... 詳細を見る
With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The ... 詳細を見る
This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The ... 詳細を見る
This benchmark model computes the valence band structure of an unstrained and a strained bulk GaN wurtzite crystal, as a tutorial for users who wish to set up multiple wave function components with the Schrödinger Equation interface. The model follows the formulation given in the ... 詳細を見る
In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey&ndash ... 詳細を見る
