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This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a function of the control gate voltage for two different amounts of stored charge. Time dependent studies are then used to simulate transient voltage pulses on the control gate. These pulses cause current to tunnel between the floating gate and the semiconductor material, allowing the EEPROM device to be both programmed and erased.