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Plasma discharges containing chlorine are commonly used to etch semiconductors and metals in microelectronics fabrication.

This tutorial model studies chlorine plasma discharges using a global (volume-averaged) diffusion model. Global diffusion models can run simulations in a fraction of the time it would take for space-dependent models. This makes them a good choice to study large reaction sets and extended parameter regions.

The Chlorine Discharge model explores absorbed powers from 50 to 600 W, working with pressures from 1 to 100 mTorr. Model results of several relevant quantities such as electron density, electron temperature, and atomic chlorine density are in good agreement with measurements performed in inductively coupled plasma reactors, found in the literature.