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This tutorial demonstrates the use of the density-gradient formulation to include the effect of quantum confinement in the device physics simulation of a silicon inversion layer. This formulation requires only a moderate increase of computational resources as compared to the conventional drift-diffusion equation. Thus it allows much speedier engineering investigation than other more sophisticated quantum mechanical methods. The result of the density-gradient theory is compared with the solution of the Schrödinger-Poisson equation. The computed electron density profiles from both theories show the expected behavior of quantum confinement and both agree well with the published figures in the reference paper.