Electrolyte-Gated Organic Field-Effect Transistor

Application ID: 119061


This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift-diffusion model. The model uses the Stabilized Convection-Diffusion Equation interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of the EDLs in the simulated device demonstrates the key feature of EGOFETs.

この model の例は, 通常次の製品を使用して構築されるこのタイプのアプリケーションを示しています.