アプリケーションギャラリ

This tutorial compares experimental data from the literature with a COMSOL model of a MOSCAP with interface traps (surface states). The Trap-Assisted Surface Recombination feature is used to simulate the effects of the trap charges and the processes of carrier capturing and emitting by the traps. The effect of the fixed charges in the gate oxide is also included. The computed values of the capacitance and conductance as functions of the gate voltage and frequency reproduce the qualitative behavior of the experimental data with comparable magnitudes. The model uses the quasi-Fermi level formulation and shows how to plot quantities such as the trap occupancy as a function of the energy.