Molecular Flow in an Ion-Implant Vacuum System
Application ID: 10011
The Ion Implanter Evaluator app considers the design of an ion implantation system. Ion implantation is used extensively in the semiconductor industry to implant dopants into wafers.
Within an ion implanter, ions generated within an ion source are accelerated by an electric field to achieve the desired implant energy. Ions of the correct charge state are selected by means of a separation magnet, which bends the ion beam to ensure that ions of a particular charge-to-mass ratio are the only ones that reach the wafer. The energy dose and angle of the ion beam are both key parameters for the process.
The app allows the user to change the angle of the wafer as well as the molecular weight of the outgassing species, the outgassing rate, and the surface temperature. The cryo- and turbopump speeds can also be adjusted.
The number density, pressure, molecular flux, as well as the average number density along the beam line can be visualized.
This application example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the 製品仕様一覧 and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.