アプリケーションギャラリ

Surface chemistry is often an overlooked aspect of reacting flow modeling. This tutorial model shows how surface reactions and species can be added to study processes like chemical vapor deposition (CVD). The tutorial then models silicon growth on a wafer.

Initially, the example uses a global model to investigate a broad region of parameters with complex chemistry. Then, a space-dependent model is set up and run. Careful attention is paid to the overall mass balance in the system while the difference between the mass-averaged velocity and diffusion velocity is explored. The model demonstrates that the total mass and molar concentration in the system is conserved. Finally, the height of the deposited silicon is studied as a function of time.