アプリケーションギャラリ

This tutorial demonstrates how to model the band-to-band tunneling across a p–n junction. The tunneling effect is imitated by defining the User-Defined Recombination domain feature which makes the electrons disappear from the conduction band on the n-side and holes disappear from the valence band on the p-side. The resulting J–V curve (current density vs. applied voltage) under forward bias is derived from the model.