アプリケーションギャラリ

This model demonstrates a three-dimensional electrothermal analysis of a high-power insulated-gate bipolar transistor (IGBT) module. The module is analyzed in a time invariant on-state operating condition, with the current distribution resolved through the semiconductor dies, metallization layers, bond wires, solder layers, busbars, and other electrically conducting components. The resulting Joule losses and temperature distribution are evaluated.

Rather than resolving the detailed semiconductor-device physics inside each IGBT die, the on-state junction behavior is represented by a reduced-order, temperature- and current-dependent effective conductivity. This conductivity is calculated so that the voltage drop across the die agrees with a prescribed collector–emitter voltage characteristic. The approach enables electrothermal feedback to be included within a computationally tractable model of the complete module, making it possible to study current sharing, localized losses, and thermal hot spots within the package.

The model uses the Joule Heating multiphysics interface, which couples Electric Currents and Heat Transfer in Solids through the Electromagnetic Heating multiphysics coupling. The micron-scale metallization layers are represented using boundary-based electrical and thermal formulations, avoiding the need to resolve their thickness with a volumetric mesh.